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BC337RL1G Espesifikasyon teknoloji

BC337RL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Transistè BJT Sèl
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 210MHz
Base Part Number BC337
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 210MHz
Transistor Type NPN
Max Collector Current 800mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV
Collector Base Voltage (VCBO) 50V
hFE Min 100
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC 45V
Terminal Position BOTTOM
Current Rating 800mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 210MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
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