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FCH110N65F-F155 Espesifikasyon teknoloji

MOSFET N-CH 650V 35A TO247

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
JESD-30 Code R-PSFM-T3
Number of Channels 1
Element Configuration Single
Turn On Delay Time 31 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 3.5mA
Current - Continuous Drain (Id) @ 25°C 35A Tc
Rise Time 21ns
Vgs (Max) ±20V
Turn-Off Delay Time 89 ns
JEDEC-95 Code TO-247AB
Drain to Source Breakdown Voltage 650V
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Series FRFET®, SuperFET® II
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 110mOhm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 357W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 17.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4895pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5.7 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 809 mJ
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FCH111 Original Espesyalize Chò ICs 2670

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