FCH76N60NF Espesifikasyon teknoloji

FCH76N60NF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 543W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 51 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 72.8A Tc
Rise Time 44ns
Vgs (Max) ±30V
Turn-Off Delay Time 213 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series SupreMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 543W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 38m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 11045pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 43 ns
Continuous Drain Current (ID) 72.8A
JEDEC-95 Code TO-247AB
Drain to Source Breakdown Voltage 600V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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