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FCPF11N60F Espesifikasyon teknoloji

MOSFET N-CH 600V 11A TO-220F

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Series SuperFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 34 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Tc
Rise Time 98ns
Vgs (Max) ±30V
Turn-Off Delay Time 119 ns
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Current Rating 11A
Power Dissipation-Max 36W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 56 ns
Continuous Drain Current (ID) 11A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 600V
REACH SVHC No SVHC
Lead Free Lead Free
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