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FDC645N Espesifikasyon teknoloji

FDC645N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Weight 36mg
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 26MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Rise Time 9ns
Vgs (Max) ±12V
Turn-Off Delay Time 35 ns
Threshold Voltage 1.4V
Drain Current-Max (Abs) (ID) 0.0055A
Dual Supply Voltage 30V
Nominal Vgs 1.4 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Terminal Position DUAL
Current Rating 5.5A
Number of Channels 1
Element Configuration Single
Power Dissipation 1.6W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
REACH SVHC No SVHC
Lead Free Lead Free
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