FGB40N60SM Espesifikasyon teknoloji

FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 349W
Base Part Number FGB40N60
Number of Elements 1
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Test Condition 400V, 40A, 6 Ω, 15V
Turn Off Time-Nom (toff) 132 ns
Gate Charge 119nC
Td (on/off) @ 25°C 12ns/92ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 17ns
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Rise Time-Max 28ns
Case Connection COLLECTOR
Power - Max 349W
Polarity/Channel Type N-CHANNEL
Max Collector Current 80A
Collector Emitter Saturation Voltage 2.3V
Turn On Time 37 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 870μJ (on), 260μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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