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FJV4101RMTF Espesifikasyon teknoloji

Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 30mg
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Form GULL WING
Base Part Number FJV4101
Polarity PNP
Power Dissipation 200mW
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -10V
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 4.7 k Ω
Length 2.92mm
Radiation Hardening No
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC -50V
Terminal Position DUAL
Current Rating -100mA
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
hFE Min 20
Continuous Collector Current -100mA
Height 930μm
Width 1.3mm
RoHS Status RoHS Compliant
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