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FQP6N40C Espesifikasyon teknoloji

FQP6N40C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 400V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 73W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 24A
Height 9.4mm
Width 4.7mm
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Published 2003
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 6A
Qualification Status Not Qualified
Power Dissipation-Max 73W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Rise Time 65ns
Vgs (Max) ±30V
Turn-Off Delay Time 21 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 400V
Avalanche Energy Rating (Eas) 270 mJ
Length 10.1mm
RoHS Status ROHS3 Compliant
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