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FQPF4N90CT Espesifikasyon teknoloji

MOSFET 900V, 4A, NCH MOSFET

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 47W
FET Type N-Channel
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4A Tc
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 4A
Drain Current-Max (Abs) (ID) 4A
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 47W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
Rds On (Max) @ Id, Vgs 4.2 Ω @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 900V
Vgs (Max) ±30V
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
Lead Free Lead Free
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