MJD340G Espesifikasyon teknoloji

MJD340G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Transistè BJT Sèl
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2003
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 300V
Terminal Form GULL WING
Current Rating 500mA
Base Part Number MJD340
JESD-30 Code R-PSSO-G2
Element Configuration Single
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 3V
Height 2.3876mm
Width 6.223mm
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 15W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.56W
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100μA
Max Frequency 10MHz
Collector Base Voltage (VCBO) 300V
hFE Min 30
Length 6.7056mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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