MPSW42RLRAG Espesifikasyon teknoloji

MPSW42RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Transistè BJT Sèl
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 300V
Terminal Position BOTTOM
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300V
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Emitter Base Voltage (VEBO) 6V
Height 6.35mm
Width 12.7mm
REACH SVHC Unknown
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
Base Part Number MPSW42
Number of Elements 1
Power Dissipation 1W
Gain Bandwidth Product 50MHz
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 300V
hFE Min 25
Length 6.35mm
Radiation Hardening No
RoHS Status RoHS Compliant
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Gen lòt ki genyen ladan yo   "MPSW4"   pati

Pati sa yo genyen ladan yo  'MPSW4' 

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