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NSBA113EDXV6T1G Espesifikasyon teknoloji

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 8.193012mg
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 6
Number of Elements 2
Element Configuration Dual
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
hFE Min 3
Continuous Collector Current -100mA
Height 550μm
Width 1.2mm
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Polarity PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 1k Ω
Resistor - Emitter Base (R2) 1k Ω
Length 1.6mm
RoHS Status ROHS3 Compliant
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