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NSBC113EDXV6T1 Espesifikasyon teknoloji

TRANS 2NPN PREBIAS 0.5W SOT563

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form FLAT
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Max Breakdown Voltage 50V
Resistor - Emitter Base (R2) 1k Ω
Lead Free Contains Lead
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2005
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 240
Current Rating 100mA
Base Part Number NSBC1*
JESD-30 Code R-PDSO-F6
Number of Elements 2
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 1k Ω
RoHS Status Non-RoHS Compliant
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