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NSS12201LT1G Espesifikasyon teknoloji

NSS12201LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Transistè BJT Sèl
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 540mW
Terminal Form GULL WING
Frequency 150MHz
Base Part Number NSS12201
Number of Elements 1
Power Dissipation 540mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 12V
Max Breakdown Voltage 12V
Emitter Base Voltage (VEBO) 6V
Turn Off Time-Max (toff) 460ns
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Power - Max 460mW
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 90mV @ 200mA, 2A
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 12V
hFE Min 200
Radiation Hardening No
RoHS Status ROHS3 Compliant
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Gen lòt ki genyen ladan yo   "NSS12"   pati

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