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NSVT65010MW6T1G Espesifikasyon teknoloji

ON SEMICONDUCTOR - NSVT65010MW6T1G - Bipolar Transistor Array, Dual PNP, -65 V, 380 mW, -100 mA, 0.9 hFE, SOT-363

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Arrays BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature -55°C~150°C TJ
Published 2015
Part Status Active
Max Power Dissipation 380mW
Power - Max 380mW
Collector Emitter Voltage (VCEO) 650mV
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Max Breakdown Voltage 65V
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 6
Packaging Cut Tape (CT)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Polarity PNP
Transistor Type 2 PNP (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 65V
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
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Pati # Manifakti Kategori Disponibilite
NSVT65010MW6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays 2775
NSVT65011MW6T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays 2563
NSVT65011MW6T1G ON Semiconductor Arrays BJT Transistors

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