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NTB6411ANT4G Espesifikasyon teknoloji

MOSFET N-CH 100V 72A D2PAK

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Subcategory FET General Purpose Powers
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 217W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 107 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 285A
Height 4.83mm
Width 9.65mm
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 217W
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 14m Ω @ 72A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 77A Tc
Rise Time 144ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 157 ns
Continuous Drain Current (ID) 72A
Drain Current-Max (Abs) (ID) 77A
Avalanche Energy Rating (Eas) 470 mJ
Length 10.29mm
Radiation Hardening No
Lead Free Lead Free
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