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NTD4809N-1G Espesifikasyon teknoloji

MOSFET N-CH 30V 9A IPAK

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 23 hours ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 1.4W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.6A Ta 58A Tc
Rise Time 22.7ns
Vgs (Max) ±20V
Turn-Off Delay Time 25.3 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 58A
Drain Current-Max (Abs) (ID) 9A
Radiation Hardening No
Lead Free Lead Free
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