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NTJD4152PT2G Espesifikasyon teknoloji

MOSFET 2P-CH 20V 0.88A SC88-6

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 272mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Power - Max 272mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Continuous Drain Current (ID) 880mA
Drain-source On Resistance-Max 0.26Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2015
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 260m Ω @ 880mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 20V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 0.88A
DS Breakdown Voltage-Min 20V
FET Feature Standard
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