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NTTFS3A08PZTAG Espesifikasyon teknoloji

Single P-Channel Power MOSFET -20V, -15A, 6.7mO

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 23 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 840mW Ta
Power Dissipation 2.2W
FET Type P-Channel
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Ta
Rise Time 56ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 165 ns
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 22A
Radiation Hardening No
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
ECCN Code EAR99
Subcategory Other Transistors
Pin Count 8
Element Configuration Single
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 6.7m Ω @ 12A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Turn-Off Delay Time 250 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
RoHS Status ROHS3 Compliant
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