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- Discrete Semiconductors
- Pre-Biased BJT Transistors
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DTA123ECAT116
Nan stok
Min. : 1
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DTA123ECAT116 Espesifikasyon teknoloji
PNP -100MA -50V DIGITAL TRANSIST
Atribi pwodwi | Valè atribi |
---|---|
Category | Discrete Semiconductors / Pre-Biased BJT Transistors |
Manufacturer | ROHM Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 13 Weeks |
Mounting Type | Surface Mount |
Transistor Element Material | SILICON |
Published | 2016 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.75 |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G3 |
Operating Temperature (Max) | 150°C |
Configuration | SINGLE WITH BUILT-IN RESISTOR |
Transistor Application | SWITCHING |
Transistor Type | PNP - Pre-Biased |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
Max Breakdown Voltage | 50V |
Resistor - Base (R1) | 2.2 k Ω |
VCEsat-Max | 0.3 V |
Atribi pwodwi | Valè atribi |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Packaging | Tape & Reel (TR) |
Part Status | Active |
Number of Terminations | 3 |
Additional Feature | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 |
Max Power Dissipation | 200mW |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power - Max | 200mW |
Polarity/Channel Type | PNP |
Collector Emitter Voltage (VCEO) | 300mV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
Transition Frequency | 250MHz |
Frequency - Transition | 250MHz |
Resistor - Emitter Base (R2) | 2.2 k Ω |
RoHS Status | ROHS3 Compliant |
DTA123ECAT116 Dokiman yo
Telechaje fichye done ak dokiman manifakti pou DTA123ECAT116
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Fichye done yo
Gen lòt ki genyen ladan yo "DTA12" pati
Pati sa yo genyen ladan yo 'DTA12'
Pati # | Manifakti | Kategori | Disponibilite |
---|---|---|---|
DTA123ECAT116 | LAPIS Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2553 |
DTA123EE | ROHM | Espesyalize Chò ICs | 3432 |
DTA123EE TL | ROHM | Espesyalize Chò ICs | 6010 |
DTA123EEBTL | ROHM Semiconductor | Pre-Biased BJT Transistors | |
DTA123EEFRATL | LAPIS Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2598 |
DTA123EEFRATL | ROHM Semiconductor | Pre-Biased BJT Transistors | |
DTA123EEFTL | LAPIS Semiconductor | Espesyalize Chò ICs | 1479 |
DTA123EET1 | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 598 |
DTA123EET1 | ON Semiconductor | Pre-Biased BJT Transistors | |
DTA123EET1 | Rochester Electronics, LLC | Pre-Biased BJT Transistors |
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