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RK7002BT116 Espesifikasyon teknoloji

MOSFET N-CH 60V 0.25A SOT-23

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Fall Time (Typ) 28 ns
Continuous Drain Current (ID) 250mA
Drain Current-Max (Abs) (ID) 0.25A
Radiation Hardening No
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
Resistance 2.4Ohm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
Number of Elements 1
Power Dissipation-Max 200mW Ta
Power Dissipation 200mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4 Ω @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 25V
Rise Time 5ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
RoHS Status ROHS3 Compliant
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