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SH8K25GZ0TB Espesifikasyon teknoloji

4V DRIVE NCH+NCH MOSFET. A POWER

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 85m Ω @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 5V
Drain-source On Resistance-Max 0.085Ohm
DS Breakdown Voltage-Min 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Part Status Active
Number of Terminations 8
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W Ta
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Drain to Source Voltage (Vdss) 40V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 0.48 mJ
FET Feature Standard
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