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SP8K2TB Espesifikasyon teknoloji

MOSFET 2N-CH 30V 6A 8-SOIC

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Turn On Delay Time 9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10.1nC @ 5V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Pulsed Drain Current-Max (IDM) 24A
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature 150°C TJ
Published 2004
Part Status Not For New Designs
Number of Terminations 8
Terminal Finish TIN COPPER
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 6A
Base Part Number *K2
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 30m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V
Rise Time 21ns
Turn-Off Delay Time 36 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.047Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Lead Free
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