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UM6K34NTCN Espesifikasyon teknoloji

MOSFET 2N-CH 50V 0.2A UMT6

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 120mW
Peak Reflow Temperature (Cel) 260
Pin Count 6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 120mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 800mV @ 1mA
Drain to Source Voltage (Vdss) 50V
Drain Current-Max (Abs) (ID) 0.2A
DS Breakdown Voltage-Min 50V
FET Feature Logic Level Gate, 0.9V Drive
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature 150°C TJ
Published 2011
Part Status Active
Number of Terminations 6
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 2.2 Ω @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 10V
Continuous Drain Current (ID) 200mA
Drain-source On Resistance-Max 2.8Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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