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RN2712JE(TE85L,F) Espesifikasyon teknoloji

TRANS 2PNP PREBIAS 0.1W ESV

Atribi pwodwi Valè atribi
Category Produits Semiconducteurs Discrets / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Resistor - Emitter Base (R2) (Ohms) -
Power - Max 100mW
Package / Case SOT-553
Frequency - Transition 200MHz
Current - Collector Cutoff (Max) 100nA (ICBO)
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package ESV
Resistor - Base (R1) (Ohms) 22k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector (Ic) (Max) 100mA
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RN2712JE(TE85L,F) Dokiman yo

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RN2712JE(TE85L,F) manifaktirè mak: Toshiba Semiconductor and Storage, Bonchip stock, RN2712JE(TE85L,F) pri referans. RN2712JE(TE85L,F) paramèt, RN2712JE(TE85L,F) Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize RN2712JE(TE85L,F) Pluggable Connectors, DSP Datesheet PDF, jwenn RN2712JE(TE85L,F) dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, RN2712JE(TE85L,F) leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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