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VSSB410S-M3/52T Espesifikasyon teknoloji

DIODE SCHOTTKY 100V 1.9A DO214AA

Atribi pwodwi Valè atribi
Category Produits Semiconducteurs Discrets / Dyòd - Rèktifye - Sèl
Manufacturer Vishay / Semiconductor - Diodes Division
Factory Lead Time 3 Weeks
Voltage - Forward (Vf) (Max) @ If 770mV @ 4A
Supplier Device Package DO-214AA (SMB)
Series TMBS®
Package / Case DO-214AA, SMB
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 250µA @ 100V
Capacitance @ Vr, F 230pF @ 4V, 1MHz
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Voltage - DC Reverse (Vr) (Max) 100V
Speed Fast Recovery = 200mA (Io)
Packaging Tape & Reel (TR)
Operating Temperature - Junction -40°C ~ 150°C
Diode Type Schottky
Current - Average Rectified (Io) 1.9A (DC)
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Pati # Manifakti Kategori Disponibilite
VSSB410S-E3 VISHAY Espesyalize Chò ICs 4958
VSSB410S-E3/52T Vishay / Semiconductor - Diodes Division Dyòd - Rèktifye - Sèl 513
VSSB410S-E3/52T Electro-Films (EFI) / Vishay Dyòd - Rèktifye - Sèl 25715
VSSB410S-E3/52T Vishay Semiconductor Diodes Division Faze Sèl Diòd Rectifier
VSSB410S-E3/5BT Vishay / Semiconductor - Diodes Division Dyòd - Rèktifye - Sèl 2725
VSSB410S-E3/5BT Electro-Films (EFI) / Vishay Dyòd - Rèktifye - Sèl 2654
VSSB410S-E3/5BT Vishay Semiconductor Diodes Division Faze Sèl Diòd Rectifier
VSSB410S-M3/52T Electro-Films (EFI) / Vishay Dyòd - Rèktifye - Sèl 160715
VSSB410S-M3/52T Vishay Semiconductor Diodes Division Faze Sèl Diòd Rectifier
VSSB410S-M3/5BT Electro-Films (EFI) / Vishay Dyòd - Rèktifye - Sèl 2609

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VSSB410S-M3/52T manifaktirè mak: Vishay / Semiconductor - Diodes Division, Bonchip stock, VSSB410S-M3/52T pri referans. VSSB410S-M3/52T paramèt, VSSB410S-M3/52T Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize VSSB410S-M3/52T Pluggable Connectors, DSP Datesheet PDF, jwenn VSSB410S-M3/52T dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, VSSB410S-M3/52T leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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