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SI3481DV-T1-GE3 Espesifikasyon teknoloji

MOSFET P-CH 30V 4A 6-TSOP

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 48 mOhm @ 5.3A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type P-Channel
Drain to Source Voltage (Vdss) 30V
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.14W (Ta)
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
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SI3481DV-T1-GE3 manifaktirè mak: Vishay / Siliconix, Bonchip stock, SI3481DV-T1-GE3 pri referans. SI3481DV-T1-GE3 paramèt, SI3481DV-T1-GE3 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SI3481DV-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, jwenn SI3481DV-T1-GE3 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SI3481DV-T1-GE3 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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