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SI4401BDY-T1-E3 Espesifikasyon teknoloji

MOSFET P-CH 40V 8.7A 8-SOIC

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.5W (Ta)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 55nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 14 mOhm @ 10.5A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta)
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