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SI7112DN-T1-E3 Espesifikasyon teknoloji

MOSFET N-CH 30V 11.3A 1212-8

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 1.5W (Ta)
Package / Case PowerPAK® 1212-8
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 17.8A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -50°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2610pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
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SI7112DN-T1-E3 manifaktirè mak: Vishay / Siliconix, Bonchip stock, SI7112DN-T1-E3 pri referans. SI7112DN-T1-E3 paramèt, SI7112DN-T1-E3 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SI7112DN-T1-E3 Pluggable Connectors, DSP Datesheet PDF, jwenn SI7112DN-T1-E3 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SI7112DN-T1-E3 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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