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SI8816EDB-T2-E1 Espesifikasyon teknoloji

MOSFET N-CH 30V MICRO FOOT

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 500mW (Ta)
Package / Case 4-XFBGA
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package 4-Microfoot
Rds On (Max) @ Id, Vgs 109 mOhm @ 1A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C -
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SI8816EDB-T2-E1 manifaktirè mak: Vishay / Siliconix, Bonchip stock, SI8816EDB-T2-E1 pri referans. SI8816EDB-T2-E1 paramèt, SI8816EDB-T2-E1 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SI8816EDB-T2-E1 Pluggable Connectors, DSP Datesheet PDF, jwenn SI8816EDB-T2-E1 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SI8816EDB-T2-E1 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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