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SIB452DK-T1-GE3 Espesifikasyon teknoloji

MOSFET N-CH 190V 1.5A SC75-6

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Package / Case PowerPAK® SC-75-6L
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 190V
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±16V
Supplier Device Package PowerPAK® SC-75-6L Single
Rds On (Max) @ Id, Vgs 2.4 Ohm @ 500mA, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
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SIB452DK-T1-GE3 manifaktirè mak: Vishay / Siliconix, Bonchip stock, SIB452DK-T1-GE3 pri referans. SIB452DK-T1-GE3 paramèt, SIB452DK-T1-GE3 Fichye PDF ak deskripsyon dyagram pin download.Ou ka itilize SIB452DK-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, jwenn SIB452DK-T1-GE3 dyagram pin ak dyagram sikwi ak metòd itilizasyon fonksyon, SIB452DK-T1-GE3 leson patikilye elektwonik.Ou ka telechaje soti nan Bonchip.
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