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IRGB4061DPBF Espesifikasyon teknoloji

IRGB4061DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 206W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.95V
Reverse Recovery Time 100 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 65 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A
IGBT Type Trench
Current - Collector Pulsed (Icm) 72A
Switching Energy 95μJ (on), 350μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 10.66mm
Radiation Hardening No
RoHS Status RoHS Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Published 2004
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 206W
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 40 ns
Rise Time 25ns
Turn-Off Delay Time 105 ns
Max Collector Current 36A
JEDEC-95 Code TO-220AB
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 18A, 22 Ω, 15V
Turn Off Time-Nom (toff) 160 ns
Gate Charge 35nC
Td (on/off) @ 25°C 40ns/105ns
Gate-Emitter Voltage-Max 20V
Height 9.02mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
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Pati # Manifakti Kategori Disponibilite
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