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BSZ100N06LS3GATMA1 Espesifikasyon teknoloji

MOSFET N-CH 60V 20A TSDSON-8

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Category Produits Semiconducteurs Discrets / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 23µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Package / Case 8-PowerVDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 30V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 60V 11A (Ta), 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TSDSON-8
Rds On (Max) @ Id, Vgs 10 mOhm @ 20A, 10V
Packaging Cut Tape (CT)
Other Names BSZ100N06LS3GATMA1CT BSZ100N06LS3GINCT BSZ100N06LS3GINCT-ND
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 20A (Tc)
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