NTMD6P02R2G Espesifikasyon teknoloji

NTMD6P02R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 29 Weeks
Contact Plating Tin
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC -20V
Terminal Form GULL WING
Current Rating -6A
Base Part Number NTMD6P02
Number of Outputs 1
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 33m Ω @ 6.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 85 ns
Threshold Voltage -880mV
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Resistance 33mOhm
Subcategory Other Transistors
Max Power Dissipation 750mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Max Output Current 6A
Element Configuration Dual
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.8A
Rise Time 20ns
Fall Time (Typ) 50 ns
Continuous Drain Current (ID) 7.8A
Gate to Source Voltage (Vgs) 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 450 pF
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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