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NVD6415ANLT4G Espesifikasyon teknoloji

MOSFET N-CH 100V 23A DPAK-4

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Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3/2
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 91ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 71 ns
Continuous Drain Current (ID) 23A
Drain-source On Resistance-Max 0.056Ohm
Avalanche Energy Rating (Eas) 79 mJ
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1024pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 80A
Radiation Hardening No
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