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NVD6415ANT4G Espesifikasyon teknoloji

MOSFET N-CH 100V 23A DPAK

Atribi pwodwi Valè atribi
Category Discrete Semiconductors / Sèl MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Rise Time 37ns
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 79 mJ
RoHS Status ROHS3 Compliant
Atribi pwodwi Valè atribi
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Power Dissipation 83W
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 55m Ω @ 23A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 23A
Drain-source On Resistance-Max 0.055Ohm
Pulsed Drain Current-Max (IDM) 89A
Radiation Hardening No
Lead Free Lead Free
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